Resistive switching memory devices based on metal oxides (ReRAM) are a promising candidate for future non-volatile memory and neuromorphic computing technologies and recently entered the market as eNVM. However, these devices often exhibit a metastable resistance state shortly after programming, which can evolve over time before stabilizing. At our Peter Grünberg Institute - Electronic Materials (PGI-7), we work on understanding the physical origin of this metastability is key to improving device reliability and performance.
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