Phase change memories (PCM) are an interesting candidate for future non-volatile memory and neuromorphic computing technologies. For the latter application, the resistance should be changed gradually at fast speed. At the Peter Grünberg Institute - Elektronische Materialien (PGI-7), we recently showed that PCM materials can be switched electrically in the sub-nanosecond regime with a record of 50 ps. In this regime, gradual RESET switching becomes feasible, which is not well understood yet.
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